lead-free green ds30578 rev. 4 - 2 1 of 5 dvr1v8w - dvr5v0w www.diodes.com diodes incorporated dvr1v8w - dvr5v0w complex array for voltage regulators epitaxial planar die construction selectively paired npn transistors & zener diodes for series pass voltage regulator circuits ideally suited for automated assembly processes lead free by design/rohs compliant (note 1) "green" device (note 2) features notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. part mounted on fr-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. case: sot-363 case material: molded plastic. "green" molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram marking & type code information: see last page ordering information: see last page weight: 0.008 grams (approximate) mechanical data a m j l d b c h k g f maximum ratings, total device @ t a = 25 c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient (note 3) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c @ t a = 25 c unless otherwise specified new product a 1 e 1 k 1 nc c 1 b 1 sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 8 all dimensions in mm characteristic symbol value unit collector-base voltage v cbo 45 v collector-emitter voltage v ceo 18 v emitter-base voltage v ebo 5v collector current - continuous (note 3) i c 1a maximum ratings, npn transistor maximum ratings, zener element @ t a = 25 c unless otherwise specified characteristic symbol value unit forward voltage @ i f = 10ma v f 0.9 v
ds30578 rev. 4 - 2 2 of 5 dvr1v8w - dvr5v0w www.diodes.com new product @ t a = 25 c unless otherwise specified electrical characteristics, npn transistor characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 45 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 18 v i c = 1ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 v i e = 100 a, i c = 0 collector cutoff current i cbo 1 a v cb = 40v, i e = 0 emitter cutoff current i ebo 1 a v eb = 4v, i c = 0 on characteristics (note 4) dc current gain h fe 150 800 i c = 100ma, v ce = 1v collector-emitter saturation voltage v ce(sat) 0.5 v i c = 300ma, i b = 30ma small signal characteristics output capacitance c obo 8pf v cb = 10v, f = 1.0mhz, i e = 0 current gain-bandwidth product f t 100 mhz v cb = 10v, i e = 50ma, f = 100mhz electrical characteristics, zener element @ t a = 25 c unless otherwise specified type number zener voltage range (note 5) maximum reverse leakage current v z @i zt i zt i r @v r nom (v) min (v) max (v) ma a v dvr1v8w 3.3 3.1 3.5 5 5 1 DVR2V5W 3.9 3.7 4.1 5 3 1 dvr3v3w 4.7 4.4 5.0 5 3 2 dvr5v0w 5.1 4.85 5.36 0.05 5 3 note: 4. short duration test pulse used to minimize self-heating effect. 5. nominal zener voltage is measured with the device junction in thermal equilibrium at t t = 30 c 1 c.
ds30578 rev. 4 - 2 3 of 5 dvr1v8w - dvr5v0w www.diodes.com new product 1 1000 100 0.0001 .001 .01 1 10 .1 h , dc current gain fe i , collector current (a) fig. 2, typical dc current gain vs collector current ( npn transistor ) c v = 1.0v ce 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs ambient temperature ( total device ) a 100 150 200 0 1 10 1000 100 0.0001 .001 .01 .1 1 10 v, (mv) ce (sat) collector-emitter saturation voltage i , collector current (a) fig. 4, collector saturation voltage vs collector current ( npn transistor ) c 1 100 10 0.1 1 10 100 c , output capacitance (pf) obo v , collector-base voltage (v) fig. 3, output capacitance vs. collector-base volta g e ( npn transistor ) cb f=1mhz 0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener current (ma) z v , zener voltage (v) fig. 5 zener breakdown characteristics ( dvr1v8w - dvr3v3w ) z t = 25c j 1v8 2v5 3v3 test current i 5.0ma z c , total capacitance (pf) t 10 100 1000 10 100 1 v , nominal zener voltage (v) fig. 6 total capacitance vs nominal zener voltage z (dvr1v8w - dvr3v3w) t=25c f = 1mhz j v=1v r v=2v r v=1v r v=2v r
ds30578 rev. 4 - 2 4 of 5 dvr1v8w - dvr5v0w www.diodes.com new product v , zener voltage (v) fig. 7 z zener breakdown characteristics (dvr5v0w) 0 100 200 300 400 500 600 700 800 900 1000 0 12 3 4 5 6 i , zener current (ua) z (note 6) ordering information device marking code packaging shipping dvr1v8w-7 vr01 sot-363 3000/tape & reel DVR2V5W-7 vr02 sot-363 3000/tape & reel dvr3v3w-7 vr03 sot-363 3000/tape & reel dvr5v0w-7 vr04 sot-363 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information xxxx ym xxxx = product type marking code, see table above, e.g., vr01 = dvr1v8w ym = date code marking y = year ex: r = 2004 m = month ex: 9 = september date code key year 2004 2005 2006 2007 2008 2009 code rs tu vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd sample applications sample application for dvr5v0w: vcc 9 = 6.0v r1 7 = 560 vo(nom) = 5.0v io = 100ma iq(typical 8 ) = 0.5ma @ io = 0ma typical 8 vreg(load) = 0.2v from io = 100ma to 0ma c , total capacitance (pf) t 1 10 100 10 100 1 v , nominal zener voltage (v) fig. 8 total capacitance vs nominal zener voltage (dvr5v0w) z t=25c f=1mhz j v=2v r v=1v r q1 z1 r1 = 560r r load vcc = 6.0v vo(nom) = 5.0v dvr5v0w
ds30578 rev. 4 - 2 5 of 5 dvr1v8w - dvr5v0w www.diodes.com new product notes: 7. resistor r1 not included. 8. typical performance shown is under setup and operating conditions specified in the sample applications. 9. recommended vcc(min) ~ vo(nom) + 1v. sample application for dvr3v3w: vcc 9 = 4.3v r1 7 = 3700 vo(nom) = 3.3v io = 100ma iq(typical 8 ) = 0.7ma @ io = 0ma typical 8 vreg(load) = 0.21v from io = 100ma to 0ma q1 z1 r1 = 370r r load vcc = 4.3v vo(nom) = 3.3v dvr3v3w sample application for DVR2V5W: vcc 9 = 3.5v r1 7 = 250 vo(nom) = 2.5v io = 100ma iq(typical 8 ) = 0.91ma @ io = 0ma typical 8 vreg(load) = 0.13v from io = 100ma to 0ma q1 z1 r1 = 250r r load vcc = 3.5v vo(nom) = 2.5v DVR2V5W sample application for dvr1v8w: vcc 9 = 2.8v r1 7 = 450 vo(nom) = 1.8v io = 100ma iq(typical 8 ) = 0.55ma @ io = 0ma typical 8 vreg(load) = 0.25v from io = 100ma to 0ma q1 z1 r1 = 450r r load vcc = 2.8v vo(nom) = 1.8v dvr1v8w
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